Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Physical vapor deposition of low-stress nitrogen-doped tungsten films

Physical vapor deposition of low-stress nitrogen-doped tungsten films

US Patent 9938616 · Granted Apr 10, 2018

Estimated economic value: $61,494,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Laryngoscope blade with glare-reducing features2025
Preventing deposition on pedestal in semiconductor substrate processing2023
In-situ chamber clean end point detection systems and methods using computer vis2021
Substrate support with increasing areal density and corresponding method of fabr2020
PVD deposition process for enhanced properties of metal films2006
PVD deposition process for enhanced properties of metal films2006