Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Devices with strained source/drain structures

Devices with strained source/drain structures

US Patent 9911826 · Granted Mar 6, 2018

Estimated economic value: $3,552,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Facility and method for executing logistics operation2025
Confined source/drain epitaxy regions and method forming same2025
Semiconductor device having epitaxy source/drain regions2025
Semiconductor device and method2025
Method of forming devices with strained source/drain structures2025
Method of forming devices with strained source/drain structures2025
Method of forming devices with strained source/drain structures2025
Method of forming devices with strained source/drain structures2025
Wireless signal receiving circuit and system2025
MIM structure2025
Method of forming source/drain regions with quadrilateral layers2025
Semiconductor device having merged epitaxial features with arc-like bottom surfa2025