Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials

Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials

US Patent 9893083 · Granted Feb 13, 2018

Estimated economic value: $26,755,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integrated assemblies and methods of forming integrated assemblies2025
Integrated circuitry and method used in forming a memory array comprising string2025
Integrated assemblies which include stacked memory decks, and methods of forming2025
Vertical transistor, integrated circuitry, method of forming a vertical transist2025
Memory arrays comprising strings of memory cells and methods used in forming a m2025
Memory device including control gates having tungsten structure2025
Integrated circuitry comprising a memory array comprising strings of memory cell2025
Method used in forming a memory array comprising strings of memory cells using p2025
Memory arrays comprising strings of memory cells with conductive islands2025
Barrier structure for preventing etching to control circuitry2025
Light emitting device and light emitting apparatus2025
Methods of forming microelectronic devices, and related microelectronic devices,2025