Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Edge termination for super-junction MOSFETs

Edge termination for super-junction MOSFETs

US Patent 9882044 · Granted Jan 30, 2018

Estimated economic value: $15,690,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System and method for substrate wafer back side and edge cross section seals2020
Structures and methods of fabricating dual gate devices2019
Edge termination for super-junction MOSFETs2019
Modulated super junction power MOSFET devices2019
Adaptive charge balanced edge termination2019
Semiconductor device with trench-like feed-throughs2018
Field boosted metal-oxide-semiconductor field effect transistor2018
Modulated super junction power MOSFET devices2018
Ultra-low drain-source resistance power MOSFET2018
Adaptive charge balanced MOSFET techniques2017
Adaptive charge balanced edge termination2017
Process for forming a short channel trench MOSFET and device formed thereby2017