Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Memories with metal-ferroelectric-semiconductor (MFS) transistors

Memories with metal-ferroelectric-semiconductor (MFS) transistors

US Patent 9852785 · Granted Dec 26, 2017

Estimated economic value: $3,695,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Resistive random access memory based one-time-programmable memory devices2025
Semiconductor device including reference cells and a method of operating thereof2025
Memory cell including programmable resistors with transistor components2025
Memory cell including programmable resistors with transistor components2025
Resistive memory device with protrusion covered with resistance changing element2025
Resistive memory device with protrusion covered with resistance changing element2025
Semiconductor fabrication apparatus and method of using the same2025
Low power adder tree structure2025
RRAM voltage compensation2025
Memory device in which latch is coupled to source line and method of operation2025
MRAM reference current2025
Integrated circuit (IC) signatures with random number generator and one-time pro2025