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Home › Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for process variations

Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for process variations

US Patent 9842638 · Granted Dec 12, 2017

Estimated economic value: $13,162,000 ⓘ

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