Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Dielectric region in a bulk silicon substrate providing a high-Q passive resonator

Dielectric region in a bulk silicon substrate providing a high-Q passive resonator

US Patent 9818688 · Granted Nov 14, 2017

Estimated economic value: $4,491,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Field plate structure to reduce self-heating in transistor and related method2025
High-mobility-electron transistors having heat dissipating structures2025
Series inductors2025
High electron mobility transistors having barrier liners and integration schemes2025
Bipolar transistor with stepped emitter2025
Transistor with wrap-around extrinsic base2024
Integrated circuit structure with through-metal through-substrate interconnect a2024
Series inductors2024
Transistor with self-aligned gate and self-aligned source/drain terminal(s) and 2024
Vertical bipolar junction transistor and method2024
Transistor with wrap-around extrinsic base2023
Transistor with wrap-around extrinsic base2023