Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Low temperature P+ polycrystalline silicon material for non-volatile memory device

Low temperature P+ polycrystalline silicon material for non-volatile memory device

US Patent 9793474 · Granted Oct 17, 2017

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Cryptocurrency hardware wallet on monolithic chip with common physical counterme2025
Battery pack and electrical device2025
Method and apparatus for improving write uniformity in a memory device2025
Non-stoichiometric resistive switching memory device and fabrication methods2025
Amine-functionalized adsorbent and method for preparing same2025
Cell cycling to minimize resistive memory random number correlation2025
Generating physical unclonable function data from a transistor of a semiconducto2024
Weak erase pulse2024
Secondary battery, battery module, battery pack and power consuming device2024
Positive electrode slurry composition, and positive electrode sheet prepared the2024
Battery pack and electrical device2024
Method and apparatus to mitigate hot electron read disturbs in 3D nand devices2024