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Home › Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatus

Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatus

US Patent 9783911 · Granted Oct 10, 2017

Estimated economic value: $424,000 ⓘ

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