Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Cross point arrays of 1-R nonvolatile resistive change memory cells using continuous nanotube fabrics

Cross point arrays of 1-R nonvolatile resistive change memory cells using continuous nanotube fabrics

US Patent 9783255 · Granted Oct 10, 2017

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Three dimensional (3D) memories with multiple resistive change elements per cell2024
Three dimensional (3D) memories with multiple resistive change elements per cell2023
Scalable nanotube fabrics and methods for making same2023
Three-dimensional array architecture for resistive change element arrays and met2022
Electrostatic discharge protection devices using carbon-based diodes2022
Electrostatic discharge protection devices using carbon-based diodes2022
Electrostatic discharge protection devices using carbon-based diodes2022
Electrostatic discharge protection devices using carbon-based diodes2022
Resistive change elements using passivating interface gaps and methods for makin2022
Methods for forming porous nanotube fabrics2021
Nonvolatile nanotube switch elements using sidewall contacts2021
Nonvolatile nanotube switch elements using sidewall contacts2021