Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Phase change memory array architecture achieving high write/read speed

Phase change memory array architecture achieving high write/read speed

US Patent 9779813 · Granted Oct 3, 2017

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Memory device and error correction method thereof2025
3D virtual ground memory and manufacturing methods for same2025
High bandwidth non-volatile memory for AI inference system2025
Reconfigurable AI system2025
Method and memory device for performing wear leveling2025
Memory device and method for manufacturing the same2025
Artificial neural network operation circuit and in-memory computation device the2025
Semiconductor memory device and data storage method thereof2024
Inductor structure and manufacturing method for the same2024
Switch circuit and memory array having the same2024
3D virtual ground memory and manufacturing methods for same2024
Semiconductor structure and endurance test method using the same2024