Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of making memory devices with programmable impedance elements and vertically formed access devices

Methods of making memory devices with programmable impedance elements and vertically formed access devices

US Patent 9755142 · Granted Sep 5, 2017

Estimated economic value: $3,003,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Reference circuits and methods for resistive memories2021
Read latency reduction in a memory device2020
Read latency reduction in a memory device2019
Read latency reduction in a memory device2017
Read operations and circuits for memory devices having programmable elements, in2017
Prototyping integrated circuit devices with programmable impedance elements2016
Circuits having programmable impedance elements and vertical access devices2016
Circuits and methods having programmable impedance elements2015
Read operations and circuits for memory devices having programmable elements, in2014
Memory devices, circuits and, methods that apply different electrical conditions2014
Circuits having programmable impedance elements2014
Integrated circuit devices and systems having programmable impedance elements wi2014