Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › RF transistor packages with high frequency stabilization features and methods of forming RF transistor packages with high frequency stabilization features

RF transistor packages with high frequency stabilization features and methods of forming RF transistor packages with high frequency stabilization features

US Patent 9741673 · Granted Aug 22, 2017

Estimated economic value: $7,735,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Bypassed gate transistors having improved stability2025
Bypassed gate transistors having improved stability2025
High performance semiconductor device2024
Monolithic microwave integrated circuit device with internal decoupling capacito2024
Devices incorporating stacked bonds and methods of forming the same2024
Integrated passive device (IPD) components and a package and processes implement2023
Bypassed gate transistors having improved stability2023
Bypassed gate transistors having improved stability2020
Transistor amplifiers having node splitting for loop stability and related metho2019
Transistor amplifiers having node splitting for loop stability and related metho2019
Bypassed gate transistors having improved stability2018
High power MMIC devices having bypassed gate transistors2018