Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for writing to a magnetic tunnel junction device

Method for writing to a magnetic tunnel junction device

US Patent 9734884 · Granted Aug 15, 2017

Estimated economic value: $3,602,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Interlock system for processing chamber exhaust assembly2025
MRAM device with integrated controller for FPGA system and methods therefor2025
Systems and methods for configuration of a configuration bit with a value2025
Cryptographic MRAM and methods thereof2025
Midpoint sensing reference generation for STT-MRAM2024
Magnetoresistive stack/structure and methods therefor2024
Magnetoresistive stack/structure and methods therefor2024
Low resistance MTJ antifuse circuitry designs and methods of operation2024
Persistent xSPI STT-MRAM with optional erase operation2024
Methods of forming magnetoresistive devices and integrated circuits2024
Systems and methods for NOR page write emulation mode in serial STT-MRAM2024
Systems and methods for dual standby modes in memory2024