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Home › Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth

Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth

US Patent 9726819 · Granted Aug 8, 2017

Estimated economic value: $2,569,000 ⓘ

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