Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for manufacturing an insulated gate bipolar transistor

Method for manufacturing an insulated gate bipolar transistor

US Patent 9722040 · Granted Aug 1, 2017

Estimated economic value: $1,985,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Insulated gate bipolar transistor including trench Schottky electrode2025
Semiconductor device and method for producing same2025
Semiconductor device layouts2025
Semiconductor device and method for producing same2025
Semiconductor device and method for designing thereof2025
Semiconductor device with gradual injection of charge carriers for softer revers2025
Reverse conducting insulated gate power semiconductor device having low conducti2024
Adjustable hybrid switch for power converters and methods of operating the same2024
Semiconductor device and method for producing same2023
Fortified trench planar MOS power transistor2023
Non-punch-through reverse-conducting power semiconductor device and method for p2022
Semiconductor device with fortifying layer2022