Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Redundant magnetic tunnel junctions in magnetoresistive memory

Redundant magnetic tunnel junctions in magnetoresistive memory

US Patent 9721632 · Granted Aug 1, 2017

Estimated economic value: $1,097,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Three axis magnetic field sensor2025
Local interconnects having different material compositions2025
Magnetoresistive stack and methods therefor2025
Magnetic tunnel junction device with magnetoelectric assist2025
Layered bottom electrode dielectric for embedded MRAM2025
MRAM-based chip identification with free random programming2025
Systems and methods for monitoring and managing memory devices2025
One-time programmable memory devices and methods2025
Forming dielectric sidewall and bottom dielectric isolation in Fork-FET devices2025
Fast self-referenced read of programmable resistance memory cells2025
Systems and methods for configuration of a configuration bit with a value2025
Sensor based memory array data scrubbing2025