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Home › Two-dimensional large-area growth method for chalcogen compound, method for manufacturing CMOS-type structure, film of chalcogen compound, electronic device comprising film of chalcogen compound, and CMOS-type structure

Two-dimensional large-area growth method for chalcogen compound, method for manufacturing CMOS-type structure, film of chalcogen compound, electronic device comprising film of chalcogen compound, and CMOS-type structure

US Patent 9719186 · Granted Aug 1, 2017

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