Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fin field effect transistor including a strained epitaxial semiconductor shell

Fin field effect transistor including a strained epitaxial semiconductor shell

US Patent 9711416 · Granted Jul 18, 2017

Estimated economic value: $2,009,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Three-dimensional array device2025
Process for preparing aminopyrimidine derivatives2025
Charge sensitive amplifier and radiation sensor including the same2024
Explainable artificial intelligence modeling and simulation system and method2024
Ferroelectric memory device and operation method thereof2023
Process for preparing aminopyrimidine derivatives2023
Process for preparing aminopyrimidine derivatives2022
Multi-terminal cross-point synaptic device using nanocrystal dot structures2021
Semiconductor structures with deep trench capacitor and methods of manufacture2021
Semiconductor structures with deep trench capacitor and methods of manufacture2021
Semiconductor structures with deep trench capacitor and methods of manufacture2021
Semiconductor structures with deep trench capacitor and methods of manufacture2021