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Home › Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatus

Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatus

US Patent 9702056 · Granted Jul 11, 2017

Estimated economic value: $464,000 ⓘ

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