Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Silicon carbide (SiC) device with improved gate dielectric shielding

Silicon carbide (SiC) device with improved gate dielectric shielding

US Patent 9685550 · Granted Jun 20, 2017

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor devices and methods of manufacturing semiconductor devices2025
Termination structures with reduced dynamic output capacitance loss2023
Short-circuit performance for silicon carbide semiconductor device2020
Short-circuit performance for silicon carbide semiconductor device2019
Silicon carbide (SiC) device with improved gate dielectric shielding2019
SiC bipolar junction transistor with reduced carrier lifetime in collector and a2017
Conductivity modulation in a silicon carbide bipolar junction transistor2016
Bipolar junction transistor in silicon carbide with improved breakdown voltage2014
Silicon carbide bipolar junction transistor (BJT) having a surface electrode dis2014
Silicon carbide semiconductor device2014
Silicon carbide bipolar junction transistor (BJT) having a surface electrode dis2013