Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Enhancement-mode field effect transistor having metal oxide channel layer

Enhancement-mode field effect transistor having metal oxide channel layer

US Patent 9680030 · Granted Jun 13, 2017

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

UV-resistant gelatin/silica viral particles, preparation method and uses thereof2014
Flash memory2014
Resistive random access memory (RRAM) using stacked dielectrics and method for m2014
Flash memory cells having leakage-inhibition layers2014
Metal gates of PMOS devices having high work functions2012
Method for making very low Vt metal-gate/high-κ CMOSFETs using self-aligned low 2010
Flash memory with deep quantum well and high-K dielectric2009
Ferroelectric thin film processing for ferroelectric field-effect transistor2005
Method for forming an epitaxial silicon-germanium layer2002