Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of forming FinFET devices with substantially undoped channel regions

Methods of forming FinFET devices with substantially undoped channel regions

US Patent 9634143 · Granted Apr 25, 2017

Estimated economic value: $7,864,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Cladding structure in the back end of line of photonics chips2025
Structure including hybrid plasmonic waveguide using metal silicide layer2025
Photonics chips including a fully-depleted silicon-on-insulator field-effect tra2024
Structure and method for random code generation2024
Optical components undercut by a sealed cavity2023
Well tap for an integrated circuit product and methods of forming such a well ta2023
Photonics chips including a fully-depleted silicon-on-insulator field-effect tra2023
Internal casing for pressurized fluid storage tank for a motor vehicle2022
Structure with different stress-inducing isolation dielectrics for different pol2022
Enlarged waveguide for photonic integrated circuit without impacting interconnec2022
Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths an2022
Asymmetrical lateral heterojunction bipolar transistors2021