Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Insulated gate bipolar transistor (IGBT) and related methods

Insulated gate bipolar transistor (IGBT) and related methods

US Patent 9634129 · Granted Apr 25, 2017

Estimated economic value: $10,126,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Power device with carrier lifetime zone2021
Insulated gate bipolar transistor (IGBT) and related methods2018
Method of manufacturing semiconductor device2011