Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor

Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor

US Patent 9608084 · Granted Mar 28, 2017

Estimated economic value: $32,649,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Monolithic integration of different light emitting structures on a same substrat2025
Light-emitting diodes with integrated optical elements2023
Monolithic integration of different light emitting structures on a same substrat2023
Bipolar transistor2022
Dual-series varactor EPI2020
High bandgap Schottky contact layer device2020
Dual stack varactor2020
Dual-series varactor EPI2018
Monolithic photonic integrated circuit (PIC) with a plurality of integrated arra2018
Semiconductor device with vertically integrated pHEMTs2018
Method of achieving acceptable performance in and fabrication of a monolithic ph2016
Emitter contact epitaxial structure and ohmic contact formation for heterojuncti2016