Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Reliability screening of ferroelectric memories in integrated circuits

Reliability screening of ferroelectric memories in integrated circuits

US Patent 9607717 · Granted Mar 28, 2017

Estimated economic value: $12,754,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Capacitor comprising a bismuth metal oxide-based lead titanate thin film2023
Low-temperature passivation of ferroelectric integrated circuits for enhanced po2022
Low-temperature passivation of ferroelectric integrated circuits for enhanced po2022
Capacitor comprising a bismuth metal oxide-based lead titanate thin film2021
Setting of reference voltage for data sensing in ferroelectric memories2020
Method and circuit enabling ferroelectric memory to be fixed to a stable state2020
Physical unclonable function system and method2019
Physical unclonable function system and method2019
Screening for data retention loss in ferroelectric memories2019
Screening for data retention loss in ferroelectric memories2019
Random number generation with ferroelectric random access memory2019
Random number generation in ferroelectric random access memory (FRAM)2018