Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Radiation-hardened dual gate semiconductor transistor devices containing various improved structures including MOSFET gate and JFET gate structures and related methods

Radiation-hardened dual gate semiconductor transistor devices containing various improved structures including MOSFET gate and JFET gate structures and related methods

US Patent 9590611 · Granted Mar 7, 2017

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Comorbidity prediction from radiology images2025
Container with magnetically operated latching mechanism and opener tool2024
Field-programmable gate array with updatable security schemes2022
Non-volatile multiple time programmable integrated circuit system with selective2020
Apparatuses and methods using current-starved ring oscillator biased by floating2020
Compact electronics test system having user programmable device interfaces and o2019
Systems and methods for inhibiting backend access to integrated circuits by inte2019
Digital test system2018
DUT continuity test with only digital IO structures apparatus and methods associ2017
Method and system for improving the radiation tolerance of floating gate memorie2017
DUT continuity test with only digital IO structures apparatus and methods associ2017
Irreproducible and re-emergent unique structure or pattern identifier manufactur2017