Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fin structures and multi-Vt scheme based on tapered fin and method to form

Fin structures and multi-Vt scheme based on tapered fin and method to form

US Patent 9583625 · Granted Feb 28, 2017

Estimated economic value: $11,370,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Capacitive wireless power transfer coupler and application thereof2025
Isolation structures in multi-gate semiconductor devices and methods of fabricat2025
Enlarged backside contact2025
Methods of forming a semiconductor device with corner isolation protection2025
Liner and barrier layer in dual damascene cu interconnect for enhanced EM and pr2025
Capacitive coupler with asymmetric insulating layers and wireless power transfer2025
Notch shape of trench gate bottom corner for better breakdown voltage of power M2024
Super junction power device and method of making the same2024
Super junction power device2024
Semiconductor device with S/D bottom isolation and methods of forming the same2024
High voltage semiconductor device comprising a combined junction terminal protec2024
Super junction power device and method of making the same2024