Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device including a trench at least partially filled with a conductive material in a semiconductor substrate

Semiconductor device including a trench at least partially filled with a conductive material in a semiconductor substrate

US Patent 9570566 · Granted Feb 14, 2017

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of manufacturing a semiconductor device2025
Semiconductor device including a field stop region2025
Method of manufacturing a metal silicide layer above a silicon carbide substrate2025
Gate driver circuit and power switching assembly with gate driver circuit2025
Power semiconductor device having an electrode with an embedded material2025
Semiconductor component having a SiC semiconductor body2025
Method of manufacturing ohmic contacts on a silicon carbide (SIC) substrate, met2025
Semiconductor device including a field stop region2025
Semiconductor device with diode chain connected to gate metallization2025
Transistor device and method of manufacturing2025
Semiconductor device with a porous portion, wafer composite and method of manufa2025
Power semiconductor device having nanometer-scale structure2025