Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fin field effect transistor and method for forming the same

Fin field effect transistor and method for forming the same

US Patent 9508609 · Granted Nov 29, 2016

Estimated economic value: $312,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of FinFET contact formation2021
Interconnection structure and method for manufacturing same2020
Semiconductor device including stripe structures2019
Semiconductor structure having common gate2018
PMOS transistor and fabrication method thereof2017
Semiconductor structures and fabrication method thereof2017
Permanent drainage ditch adapted to improve yield from farmland2017
Method of FinFET formation2017
Semiconductor device2017
Semiconductor device and method of manufacturing the same2016
Stripe structures and fabrication method thereof2016
Semiconductor structure having common gate and fabrication method thereof2015