Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Trench insulated gate bipolar transistor and edge terminal structure including an L-shaped electric plate capable of raising a breakdown voltage

Trench insulated gate bipolar transistor and edge terminal structure including an L-shaped electric plate capable of raising a breakdown voltage

US Patent 9502511 · Granted Nov 22, 2016

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Manufacturing method of split gate trench device2025
Trench power semiconductor device2024
Trench MOSFET and manufacturing method of the same2023
Gallium nitride high electron mobility transistor and gate structure thereof2020
Method of manufacturing gate structure for gallium nitride high electron mobilit2020
Power chip and structure of transistor2019
Power MOSFET2018
Method of fabricating power MOSFET2017
Trench power metal oxide semiconductor field effect transistor and edge terminal2016
Power semiconductor device and edge terminal structure thereof including an L-sh2015
Power supply system with multiple power sources in parallel2015
Power MOSFET2014