Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Mitigating electromigration, in-rush current effects, IR-voltage drop, and jitter through metal line and via matrix insertion

Mitigating electromigration, in-rush current effects, IR-voltage drop, and jitter through metal line and via matrix insertion

US Patent 9496174 · Granted Nov 15, 2016

Estimated economic value: $8,218,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device2025
Compute-In-Memory architecture using look-up tables2025
Semiconductor device2024
Low precision and coarse-to-fine dynamic fixed-point quantization design in conv2024
Package structure with a barrier layer2024
Method for digitizing bone marrow smear2023
Deep neural network with low-precision dynamic fixed-point in reconfigurable har2023
Infrared and non-infrared channel blender for depth mapping using structured lig2023
Lossless model compression by batch normalization layer pruning in deep neural n2022
Semiconductor device manufacturing method and associated semiconductor die2022
Method for forming package structure with a barrier layer2022
Method for localization of bone marrow white blood cells based on saturation clu2022