Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for forming a superjunction device with improved ruggedness

Method for forming a superjunction device with improved ruggedness

US Patent 9478441 · Granted Oct 25, 2016

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Hybrid semiconductor device having a GaN transistor and a silicon MOSFET2013
Hybrid semiconductor device2011
High voltage vertical conduction superjunction semiconductor device2010
Superjunction device with improved ruggedness2010
Termination for a superjunction device2010
Superjunction device with improved ruggedness2007
High power silicon carbide and silicon semiconductor device package2005
Bidirectional shallow trench superjunction device with resurf region2004
Trench fill process2004
Lateral conduction superjunction semiconductor device2004
Method of preparing polysilicon FET built on silicon carbide diode substrate2004
High voltage vertical conduction superjunction semiconductor device2003