Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Localized region of isolated silicon over recessed dielectric layer

Localized region of isolated silicon over recessed dielectric layer

US Patent 9466520 · Granted Oct 11, 2016

Estimated economic value: $13,658,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Heterogeneous integrated circuit for short wavelengths2024
Waveguide enhanced analyte detection apparatus2023
Docking station with waveguide enhanced analyte detection strip2023
Heterogeneous integrated circuit for short wavelengths2022
Semiconductor substrate with integrated inductive component2021
Vertical optical via and method of fabrication2021
Isolated semiconductor layer over buried isolation layer2021
Isolated semiconductor layer over buried isolation layer2021
Compact chip scale LIDAR solution2020
Semiconductor die with back-side integrated inductive component2020
Vertical optical via and method of fabrication2020
Heterogeneous integrated circuit for short wavelengths2020