Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Field effect transistor with heterostructure channel

Field effect transistor with heterostructure channel

US Patent 9437738 · Granted Sep 6, 2016

Estimated economic value: $3,347,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Silica aerogel-containing polyester masterbatch, method for making the same and 2025
Touch device for increasing control efficiency and driving method of touch panel2013
Touch input device2013
Method for determining touch signal generating by sensor structure of touch pane2012
Sensor structure of touch panel and method for determining touch signal generati2012
Method of positioning coordinate2012
High voltage metal-oxide-semiconductor transistor devices and method of making t2007
High-voltage device structure2007
High voltage metal-oxide-semiconductor transistor devices and method of making t2006
Ink container having a pressure stabilizer module2004
Pressure-regulating airbag for embedding-type ink cartridge and the method for a2004
Underpressure regulating mechanism for inkjet pens2004