Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown

Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown

US Patent 9437718 · Granted Sep 6, 2016

Estimated economic value: $4,975,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Darlington pair bipolar junction transistor sensor2024
Low resistance contacts including intermetallic alloy of nickel, platinum, titan2024
Sacrificial material facilitating protection of a substrate in a qubit device2024
System and method for forming solder bumps2024
Direct growth of lateral III-V bipolar transistor on silicon substrate2024
Direct growth of lateral III-V bipolar transistor on silicon substrate2024
Series connected stacked vertical transistors for high voltage applications2024
Selective chemical frequency modification of Josephson junction resonators2024
Low resistance contacts including intermetallic alloy of nickel, platinum, titan2024
Spurious junction prevention via in-situ ion milling2023
Vertical bipolar junction transistor and vertical field effect transistor with s2023
Vertical bipolar junction transistor with all-around extrinsic base and epitaxia2023