Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Current sensing of emitter sense insulated-gate bipolar transistor (IGBT)

Current sensing of emitter sense insulated-gate bipolar transistor (IGBT)

US Patent 9431386 · Granted Aug 30, 2016

Estimated economic value: $40,656,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Array cutting knife-type cotton topping machine and control method thereof2025
Starch-embedded aroma substance microcapsule and preparation method therefor2025
Large-scale denudation depth thematic mapping method2025
Precious metal catalyst briquettes, process for the manufacture and for the ince2025
Surgical conduit anastomosis suture tensioning device2025
Plant squalane composition, preparation method thereof, and application thereof2025
Data processing method and apparatus for data transfer in distributed storage sy2025
Pulse width modulation method, pulse width modulation module, and display device2025
Method for remote assistance and device2025
Display module and method for driving same, and display device2025
Breath training device2025
Lipid compound containing carbamate bond and applications thereof2025