Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Enhancement mode III-nitride device and method for manufacturing thereof

Enhancement mode III-nitride device and method for manufacturing thereof

US Patent 9425281 · Granted Aug 23, 2016

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of manufacturing a III-N enhancement mode HEMT device2024
Group III-nitride based vertical power device and system2022
3D power device and system2021
Schottky diode structure and method of fabrication2017
Low temperature ohmic contacts for III-N power devices2017
Method for producing a semiconductor device comprising a Schottky diode and a hi2016
Method for producing a semiconductor device comprising a Schottky diode and a hi2016
Gringo heterojunction bipolar transistor with a metal extrinsic base region2015
III-nitride transistor with source-connected heat spreading plate2014
Method for forming a spacer2000