Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Resistive memory cell having a reduced conductive path area

Resistive memory cell having a reduced conductive path area

US Patent 9385313 · Granted Jul 5, 2016

Estimated economic value: $16,774,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Thin film resistor (TFR) formed in an integrated circuit device using wet etchin2024
Thin film resistor (TFR) formed in an integrated circuit device using TFR cap la2022
Thin film resistor (TFR) formed in an integrated circuit device using an oxide c2022
Forming a thin film resistor (TFR) in an integrated circuit device2021
Methods of using water-soluble inorganic compounds for implants2021
Systems and methods for forming a thin film resistor integrated in an integrated2020
Memory cell with a flat-topped floating gate structure2020
Memory cell with oxide cap and spacer layer for protecting a floating gate from 2020
Flash memory cell with dual erase modes for increased cell endurance2019
Floating gate spacer for controlling a source region formation in a memory cell2019
Memory cell with asymmetric word line and erase gate for decoupled program erase2019
Spacer enabled poly gate2019