Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device having a patterned gate dielectric

Semiconductor device having a patterned gate dielectric

US Patent 9385202 · Granted Jul 5, 2016

Estimated economic value: $15,004,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor devices and methods of manufacturing semiconductor devices2025
Semiconductor devices having segmented ring structures2019
Insulated gate bipolar device and manufacturing method thereof2018
Insulated gate bipolar device and manufacturing method thereof2018
Semiconductor device and method of manufacture2017
Semiconductor device and method of manufacture2017
Semiconductor devices having super-junction trenches with conductive regions and2017
Semiconductor devices and method of making the same2015
Method of forming a semiconductor device having a patterned gate dielectric and 2015
Method of forming a semiconductor device having a patterned gate dielectric and 2015