Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Weir method for improved single crystal growth in a continuous Czochralski process

Weir method for improved single crystal growth in a continuous Czochralski process

US Patent 9353457 · Granted May 31, 2016

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Memory sharing for machine learning processing2025
Use of a moisture reservoir for retreading2025
Carbon black pellets bound by functional polymer2021
Methods for manufacturing a tread for agricultural tire using a dinitrile oxide 2021
Carbon black pellets bound by functional polymer2020
Method of preparing a bottom surface of a precured tire tread2019
Carbon black pellets bound by styrene-butadiene latex polymer2019
Combustion flue gas NOx treatment2014
System for continuous growing of monocrystalline silicon2012
Weir design providing optimal purge gas flow, melt control, and temperature stab2012
Weir design providing optimal purge gas flow, melt control, and temperature stab2012
Crucible weight measurement system for controlling feedstock introduction in Czo2012