Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Replacement gate MOSFET with a high performance gate electrode

Replacement gate MOSFET with a high performance gate electrode

US Patent 9337289 · Granted May 10, 2016

Estimated economic value: $1,020,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for sharing resource, method for creating service, electronic device, and2025
Multi-VT solution for replacement metal gate bonded stacked FET2025
Micro puree machine with fixed motors2025
Prognostication and amelioration of gas ingress in hydraulic systems2025
High-performance on-chip memory controller2025
Devices, systems, and methods for performing lane-specific error detection in hi2025
Modulating apolipoprotein (A) expression2025
Method for producing hypereutectoid steel rail resistant to contact fatigue2025
TOF apparatus and electronic device2025
Electronic devices with a low dielectric constant2025
Sealing machine2025
Upper and lower gate configurations of monolithic stacked FinFET transistors2025