Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High voltage power semiconductor device on SiC

High voltage power semiconductor device on SiC

US Patent 9337277 · Granted May 10, 2016

Estimated economic value: $36,542,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method and apparatus for removal of surface carbon from polysilicon2025
Furnace for seeded sublimation of wide band gap crystals2021
Graphite crucible for sublimation growth of SiC crystal2019
Furnace for seeded sublimation of wide band gap crystals2019
Reaction cell for growing SiC crystal with low dislocation density2018
Method for manufacturing SiC wafer fit for integration with power device manufac2018
Method for growing a SiC crystal by vapor deposition onto a seed crystal provide2017
Method for growing a SiC crystal by vapor deposition onto a seed crystal provide2017
Method of manufacturing substrates having improved carrier lifetimes2016
Method of manufacturing substrates having improved carrier lifetimes2016
Method for manufacturing SiC wafer fit for integration with power device manufac2016
Heteroelement siloxane compounds and polymers2015