{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Doped zinc oxide as N+ layer for semiconductor devices", "item": "https://www.patentleaderboard.com/patent/9324813"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Doped zinc oxide as N+ layer for semiconductor devices

Doped zinc oxide as N+ layer for semiconductor devices

US Patent 9324813 · Granted Apr 26, 2016

Estimated economic value: $2,956,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Conductive oxide diffusion barrier for laser crystallization2025
Aluminum oxide protected lithium metal tunable 3D silicon batteries2025
Energy storage method using aluminum oxide protected lithium metal tunable 3D si2025
Vertical silicon Josephson Junction device for qubit applications2025
Non-invasive skin sensor for long-term monitoring and method for fabricating the2025
Crossbar memory array in back end of line2025
Epitaxial growth using carbon buffer on substrate2025
Lithium-ion battery with thin crystalline anode and methods of making same2025
Crossbar memory array in back end of line with crystallization front2025
Semiconductor structure and fabrication method thereof2025
Nanocavity monolayer laser monolithically integrated with LED pump2025
Nanocavity monolayer laser monolithically integrated with LED pump2025