Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Double patterning strategy for contact hole and trench in photolithography

Double patterning strategy for contact hole and trench in photolithography

US Patent 9323155 · Granted Apr 26, 2016

Estimated economic value: $2,730,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method and user equipment for determining precoder of MIMO system2025
Method of fabricating semiconductor device with reduced trench distortions2025
Multi-chip packages and methods of forming the same2025
Semiconductor package having a semiconductor device bonded to a circuit substrat2025
Using cumulative heat amount data to qualify hot plate used for post-exposure ba2025
Level shifter2025
Semiconductor device including source/drain contact having height below gate sta2025
Semiconductor structure and manufacturing method thereof2025
Semiconductor package2025
Semiconductor package and method manufacturing the same2025
Package structure with lid and method for forming the same2025
Chip package structure having molding layer2025