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Home › Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown

Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown

US Patent 9318585 · Granted Apr 19, 2016

Estimated economic value: $3,648,000 ⓘ

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