Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of forming parallel wires of different metal materials through double patterning and fill techniques

Methods of forming parallel wires of different metal materials through double patterning and fill techniques

US Patent 9312204 · Granted Apr 12, 2016

Estimated economic value: $10,096,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Vertically spaced intra-level interconnect line metallization for integrated cir2025
Trench-based quantum dot devices with conductive liners2025
Technologies for radio frequency optimized interconnects for a quantum processor2025
Nanoribbon-based quantum dot devices2025
Quantum dot devices with multiple barrier gates between adjacent plunger gates2025
Directed self-assembly enabled subtractive metal patterning2025
Interconnect wires including relatively low resistivity cores2025
Quantum dot array devices with shared gates2025
Diamondoid materials in quantum computing devices2025
Quantum dot devices with fins2025
Contact over active gate structures using directed self-assembly for advanced in2025
Lateral gate material arrangements for quantum dot devices2025