Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Ozone gas generation processing apparatus, method of forming silicon oxide film, and method for evaluating silicon single crystal wafer

Ozone gas generation processing apparatus, method of forming silicon oxide film, and method for evaluating silicon single crystal wafer

US Patent 9287111 · Granted Mar 15, 2016

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Process for producing polycrystalline silicon mass2022
Method for manufacturing resistivity standard sample and method for measuring re2020
System for producing polycrystalline silicon, apparatus for producing polycrysta2019
C-V characteristic measurement system and method for measuring C-V characteristi2018
Carbon electrode with slidable contact surfaces and apparatus for manufacturing 2017
Reactor for producing polycrystalline silicon, system for producing polycrystall2015
System for producing polycrystalline silicon, apparatus for producing polycrysta2015
Polycrystalline silicon rod and method for manufacturing polycrystalline silicon2015
Method for measuring carbon concentration in polycrystalline silicon2015
Core wire holder for producing polycrystalline silicon and method for producing 2014
Method of fabricating light emitting device and compound semiconductor wafer and2011
Preferential etching method and silicon single crystal substrate2010