Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device having tungsten gate electrode and method for fabricating the same

Semiconductor device having tungsten gate electrode and method for fabricating the same

US Patent 9281373 · Granted Mar 8, 2016

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device having buried gate structure and method for manufacturing t2018
Semiconductor device having buried gate structure and method for manufacturing t2018
Semiconductor device having buried gate structure and method for manufacturing t2018
Semiconductor device having buried gate structure, method for manufacturing the 2017
Semiconductor device having buried gate structure and method for manufacturing t2017
Dual work function buried gate-type transistor, method for forming the same, and2017
Transistor having tungsten-based buried gate structure, method for fabricating t2016
Display screen or portion thereof with animated graphical user interface2016
Dual work function buried gate-type transistor, method for forming the same, and2016
Semiconductor device with transistor and method of fabricating the same2016
Semiconductor device including fluorine-free tungsten barrier layer and method f2015
Fusing unit and image forming apparatus using the same2011