Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered airgap field plates

Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered airgap field plates

US Patent 9245960 · Granted Jan 26, 2016

Estimated economic value: $652,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

High-mobility-electron transistors having heat dissipating structures2025
Field effect transistor with shallow trench isolation features within source/dra2025
Heterojunction bipolar transistor with buried trap rich isolation region2025
High electron mobility transistors having barrier liners and integration schemes2025
Contact-over-active-gate transistor structures with contacts landed on enlarged 2025
Field-effect transistors having a gate electrode positioned inside a substrate r2025
Thermally-conductive features positioned adjacent to an optical component2024
Heterojunction bipolar transistor with buried trap rich isolation region2024
Field effect transistor2024
IC structure including porous semiconductor layer in bulk substrate adjacent tre2024
Semiconductor on insulator wafer with cavity structures2024
IC structure including porous semiconductor layer under trench isolation2024